摘要
Semiconductor nanocrystals (NCs) hold immense potential as luminescent materials for various optoelectronic applications. While significant progress has been made in developing NCs with outstanding optical properties in the visible range, their counterparts emitting in the ultraviolet (UV) spectrum are less developed. Rb2AgI3is a promising UV-emitting material due to its large band gap and high stability. However, the optical properties of low-dimensional Rb2AgI3NCs are yet to be thoroughly explored. Here, we synthesized Rb2AgI3NCs via a hot injection method and investigated their properties. Remarkably, these NCs exhibit UV luminescence at 302 nm owing to self-trapped excitons. The wide-bandgap nature of Rb2AgI3NCs, combined with their intrinsic UV luminescence, offers considerable potential for applications in UV photonic nanodevices. Our findings contribute to the understanding of Rb2AgI3NCs and pave the way for exploiting their unique properties in advanced optoelectronic systems.Keywords:Rb2AgI3;nanocrystals;ultraviolet luminescence;high stability
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