Improving Perovskite Green Quantum Dot Light-Emitting Diode Performance by Hole Interface Buffer Layers

Perovskite quantum dot light-emitting diodes (QLEDs) are potential candidates for next-generation displays due to their high color purity and wide color gamut. Due to the strong electron-accepting ability of poly[bis(4-phenyl) (2,4,6-trimethylphenyl) amine] (PTAA), quantum dot (QD) films are prone to be charged, which leads to the imbalance of charge injection and the increase of nonradiative recombination, ultimately affecting the performance of the QLEDs. Here, we compared and studied two polymers, poly(methyl methacrylate) (PMMA) and poly(vinyl pyrrolidone) (PVP), as the hole interface buffer layers of QD films, which effectively reduced the defect density, suppressed nonradiative recombination, and greatly improved the efficiency and stability of QLEDs. The devices with PMMA achieved a maximum external quantum efficiency of 20.71%.