Electron structure effects of S-doped In2O3 flowers on NO2 sensitivity

To further develop sensing materials for NO 2 gas detection practical application, the operating temperature of the sensor should be significantly reduced. In this paper, In 2 O 3 flowers were prepared by the microwave-assisted hydrothermal method . Then, In 2 O 3 was doped using TAA (thioacetamide). The prepared S-doped In 2 O 3 flowers have good gas sensitivity and significantly reduced operating temperature. When exposed to 10 ppm NO 2 gas, the corresponding response was 250 at 118 °C. It can be demonstrated by the first principle calculations, in which the doping of S atoms changes the electron structure of In 2 O 3 from semiconductor to metal with a lower potential barrier. Then, significantly affects the electron crossing the intergranular potential barriers. Therefore, the operating temperature of the sensor can be reduced. Our research results will provide new research ideas and technical approaches for designing, fabricating, and applying a new generation of In 2 O 3 gas sensors.