Synthesis and luminescence characteristics of an efficient broadband NIR phosphor: Cr3+ activated GaTa0.5Nb0.5O4

NIR phosphor-converted light emitting diodes possess extensive application in a variety of occasions. And the exploration of NIR phosphors having outstanding quantum yield and thermostability is still a challenge. In this work, the layered structure and broadband GaTa 0.5 Nb 0.5 O 4 :Cr 3+ phosphors owning excellent performance were synthesized. The GaTa 0.5 Nb 0.5 O 4 :0.025Cr 3+ phosphor provides a quantum yield of 92.2%, as well as an activation energy of 0.329. The NIR pc-LED formed via the combination of GaTa 0.5 Nb 0.5 O 4 :0.025Cr 3+ phosphor and blue LED chip owns an output power of 4.56 mW and a photoelectric conversion efficiency of 9.37% when driven at 20 mA, and the output power increases to be 44.6 mW and the photoelectric conversion efficiency changes to be 7.19% when driven at 250 mA. The results of this work demonstrated that the Cr 3+ activated GaTa 0.5 Nb 0.5 O 4 phosphors may be a prospective candidate for NIR phosphor-converted light emitting diodes.