摘要
Semiconductors Ag 8 SnS 6 (ATS) nanoparticles were synthesized by a simple one-pot method. Meanwhile, Se was added to the ATS process to form semiconductors Ag 8 SnS 6-x Se x (ATSSe) (x = 0.0, 0.2, 0.4, 0.6, 0.8) nanoparticles. The prepared ATS nanoparticles were mainly triangle in shape with grain sizes ranging from 15 ∼ 60 nm, and ATSSe nanoparticles were formed after the addition of Se during the synthesis process. Phase transformation of the synthesized nanoparticles rhombohedral crystalline ATS to cubic ATSe was observed for Se substitution ratios x in the range of 0.2 ∼ 0.8. The band gap of ATSSe nanoparticles was in the range of 1.16 ∼ 0.85 eV. This finding suggests that Se substitution is an effective method to regulate the band gap and structure of ATS.
危险品化学品经营许可证(带存储)