Stabilization of CsPbBr3 Nanocrystals via Defect Passivation and Alumina Encapsulation for High-Power Light-Emitting Diodes

The instability of inorganic cesium lead halide perovskite quantum dots (QDs) limits their commercial applications. Here, a streamline surface nanotailoring strategy combining defect passivation and alumina infiltration and encapsulation via atomic layer deposition was employed to improve the luminescence properties and stability of QD films. Didodecyl dimethyl ammonium bromide with oleic acid pretreatment was used to reduce nonradiative recombination and photoluminescence quenching through strong bonding. Al2O3 infiltrated through the gaps between the QDs with ng precision control and formed a dense encapsulation barrier, which separated QDs from the influence of the external environment. The fluorescence lifetime and the overall stability of the obtained QD films were greatly improved, which have application prospects in high-power white light-emitting diodes.