A Low-Cost Synthetic Route of FAPbI3 Quantum Dots in Air at Atmospheric Pressure: The Role of Zinc Iodide Additives

Perovskite quantum dots (PQDs) have shown great promise in optoelectronic device applications. Typically, a traditional hot-injection method with heating and high vacuum pressure is used to synthesize these colloidal nanoparticles. In this article, we report a low-cost synthetic method for FAPbI3PQDs in air at atmospheric pressure with the assistance of ZnI2. Compared with the FAPbI3PQDs synthesized under vacuum/N2condition, the air-synthesized Zn:FAPbI3PQDs exhibit the same crystalline structure with a similar preferential crystallographic orientation but demonstrate higher colloidal stability and higher production yield. Furthermore, we examine the influence of ZnI2during the synthesis process on morphologies and optoelectronic properties. The results show that the mean size of the obtained FAPbI3PQDs is decreased by increasing the amount of added ZnI2. More importantly, introducing an optimal amount of ZnI2into the Pb source precursor enables increasing the carrier lifetime of FAPbI3PQDs, showing the potential beneficial effect on device performance.