摘要
The development of perovskite solar cells has improved rapidly. However, PSCs generally suffer from instability, due to the detrimental defects. Additive engineering is a favorable method for defect passivation. In this work, the linear pseudo-halogen salt, KSCN, is introduced into the MAPbI 3 perovskite film to improve the performance of PSC. The trap density of cells with SCN − is decreased significantly. The SCN − not only can fill halogen vacancies to reduce the halide-related defects, but also can interact with the uncoordinated Pb 2+ via coordinate bond to stabilize perovskite lattice structure. Moreover, the performance of devices with other linear pseudo-halogen anions (OCN − , SeCN − ) are also investigated. Due to the improved short circuit current density, the power conversion efficiency of devices increases from 18.02% (PVK) to 20.41% (PVK–SCN - ), 19.53% (PVK–OCN - ) and 19.23% (PVK–SeCN - ), respectively. After introducing pseudo-halide anions, the devices showed robust stability under the ambient environment.
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