Fabrication of Sx/In2O3−x based microsphere for photoexcitation enhancing the NO2 gas detection properties

Development research as a NO 2 gas sensor has attracted extensive attention recently. However, how to improve the electrical conductivity of materials, adjust the band structure of materials through photoexcitation and improve the carrier lifetime is still a challenge. In this work, an S-doped In 2 O 3 structure (S x /In 2 O 3−x ) was synthesized by enforcing the simple hydrothermal method . Doping directly controls the distribution of structural defects and oxygen vacancies in the material structure, and the response to NO 2 increases by orders of magnitude under photoexcitation. Various structural characterization techniques examined the properties of the S x /In 2 O 3−x -based material. More specifically, its electro-optical properties and the impact of S doping on its energy band structure were thoroughly analyzed to investigate the origins of the enhanced responsivity .