Large-scale synthesis of Si3N4 nanowires by a modified carbothermal reduction method using graphite felt as growth substrate

In this work, silicon nitride nanowires (Si 3 N 4 NWs) were successfully prepared by a modified carbothermal reduction method, using graphite felt as a growth substrate and in the absence of the catalysts. The synthesized Si 3 N 4 NWs exhibited smooth surface, uniform morphology and high aspect ratios. The high purity and high crystallinity of Si 3 N 4 NWs were confirmed by XRD , XPS , etc. More importantly, the vapor–solid (VS) growth mechanism of Si 3 N 4 NWs was proposed. It is indicated that the graphite felt played a crucial role in increasing the proportion of the gas-phase reaction to obtain large-scale Si 3 N 4 NWs. The Si 3 N 4 NWs produced by this approach have the advantages of high yield, high purity and low cost, which are very prospective for application.