摘要
Rational design of cheap and easily available semiconductor photocatalysts for photocatalytic nitrogen fixation has attracted widespread attention. However, the enhancing efficiency of fixation nitrogen into ammonia (NH 3 ) under mild conditions is still a challenge. Based on the energy band engineering theory, the band gap of graphitic carbon nitride (g-C 3 N 4 ) can be adjusted by boron element doping. In this study, boron-doped graphitic carbon nitride with a porous rod-like 2D/1D hierarchical architecture was prepared (BCN) via a convenient hydrothermal and thermal polymerization method. Due to its special structure, the as-prepared BCN photocatalysts had a high specific surface area, enhanced visible light absorption and good photogenerated carrier separation efficiency. The optimal ammonia yield of BCN can reach 434.74 μmol·g −1 ·h −1 without the presence of a sacrificial agent, which was 57.35 times higher than that of bulk g-C 3 N 4 . According to the analysis of the experimental results, the excellent photocatalytic nitrogen fixation performance was due to the synergistic effect between the doping of nonmetallic boron element and the 2D/1D porous structure, which exposed more active sites, thus boosting the photocatalytic nitrogen fixation efficiency. This study provides a guiding significance for the construction of high-efficiency photocatalysts with a special 2D/1D porous hierarchical architecture in photocatalytic nitrogen fixation.
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