24.20%-Efficiency MA-Free Perovskite Solar Cells Enabled by Siloxane Derivative Interface Engineering

Suppressing defects at the interface between the TiO 2 electron transport layer (ETL) and perovskite film is critical for high efficiency and stable perovskite solar cells (PSCs). Herein, a siloxane derivative diethylphosphatoethylsilicic acid (PSiOH) is developed to modify the interface of TiO 2 ETL/FA 0.83 Cs 0.17 PbI 3 perovskite. Comprehensive characteristics reveal that silicon hydroxyl (  Si  OH) in PSiOH can reduce surface defects, improve the electrical properties and optimize the energy band structure of TiO 2 by forming a Si  O  Ti bond, while the phosphate bond (  PO) in PSiOH can passivate Pb-related defects on the perovskite bottom surface. Consequently, PSiOH-modified PSCs yield a remarkable power conversation efficiency of 24.20% and improved air, thermal, or illumination stabilities. This study provides insight into passivation defects at the buried interface for efficient and stable PSCs.