摘要
Photoinduced charge separation and transfer has been recognized as one of the core factors affecting the photoelectrochemical (PEC) performance of BiVO4 based photoanodes. To achieve a higher charge separation efficiency, modulating the surface band edge of BiVO4-based photoanodes could be regarded as the best choice but still a challenge. Herein, first, it was confirmed by density functional theory (DFT) calculations that pristine BiVO4 could form a type-II heterojunction with BiVO4–VBi (replacing Bi sites with V in BiVO4), which could be used to enhance carrier separation. Then we use a gas-phase cation exchange (CA) method to in situ modulate the surface band edge of the BiVO4 photoanode by partially replacing Bi on the surface with V to form a V-rich surface. The charge separation efficiency of the optimized V-rich BiVO4 (V/BVO) photoanode is significantly enhanced from 56.5% to 81.5% compared to pristine BiVO4. As expected, it also displays a higher photocurrent density of 2.87 mA cm−2 at 1.23 V vs. RHE (under AM 1.5G illumination), which is nearly 3.2 times higher compared with pristine BiVO4. Upon further loading the FeOOH cocatalyst, the photocurrent of the V/BVO/FeOOH photoanode reached 4.26 mA cm−2 due to the boosted surface water oxidation properties. This work sheds light on a simple strategy to regulate surface band edges for designing highly efficient photoanodes.
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