摘要
Epitaxial LaMnO3thin films were grown on SrTiO3substrate using a one-stage hydrothermal route from La(NO3)3, MnCl2and KMnO4in an aqueous solution of 10 M KOH at 340 °C. Scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS) indicate full coverage of LaMnO3on the substrate. X-ray diffraction in the symmetric ω/2θ mode suggests the film has an out-of-plane preferred orientation along the [001] direction of the substrate. The LaMnO3epitaxial thin film growth mechanism is proposed based on the analysis of the atomic sharp interface formed between LaMnO3and the SrTiO3substrate, as seen by aberration−corrected scanning transmission electron microscopy (AC−STEM) imaging in combination with electronic energy loss spectroscopy (EELS). Compared with the conventional vapor deposition methods, the one-stage hydrothermal route opens up a new way to fabricate complex oxide epitaxial heterostructures.Keywords:LaMnO3;hydrothermal;epitaxy;thin film;interface;strain
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