In-situ formation of titanium carbide in carbon-rich silicon oxycarbide ceramic for enhanced thermal stability

Silicon oxycarbide (SiOC) ceramic has attracted great attention as fascinating candidate of high-temperature material, however, its thermal stability is significantly limited by the phase separation at high temperature. Here, a TiC/SiOC ceramic was prepared by pyrolysis of a tetrabutyl titanate modified carbon-rich polysiloxane (TBT/PSO) precursor. The TiC phase is in-situ formed by the carbothermal reaction of TBT-derived amorphous TiO 2 phase with excess free-carbon phase during pyrolysis, and its size and amount increase with the pyrolysis temperature. The SiC phase appears at a higher temperature than the TiC phase and is hindered by the increased Ti content in the TBT/PSO precursor. Thus, the TiC/SiOC ceramic exhibits better thermal stability and crystallization resistance than the TiC-free SiOC ceramic under the thermal treatment (1500 °C) in argon atmosphere. The in-situ formation of metal carbide into the carbon-rich SiOC ceramic would further expand its application at high temperature environments.