摘要
In this paper, we prepared a series of aryl group functionalized polymers, via the reversible addition–fragmentation chain transfer (RAFT) polymerization, used as insulator layer materials for pentacene thin-film transistors. The poly(methyl methacrylate) (PMMA)-based block polymers contain naphthyl side groups that could induce ordered morphology of pentacene due to π–π interaction. Furthermore, the block polymers can effectively increase the dielectric constant (6.59), resulting in a threshold voltage drop from −15 V to −7 V.
危险品化学品经营许可证(带存储)