摘要
We report a facile, versatile, and efficient deposition technique for CsPbBr 3 film growth in ambient conditions satisfying nano-scale control and potential large-scale production. Achieving highly crystalline halide perovskite films for solar cells remains challenging, particularly in ambient conditions. Herein, we employed a full sequential dip-coating technique for preparing CsPbBr 3 perovskite films in ambient conditions and used them as the photo-absorbing layer in n-i-p type mesoscopic-structured photovoltaic devices. The sequential dip-coating approach can grow highly crystalline CsPbBr 3 films. The film composition can be tuned with controlled deposition parameters to reduce unwanted derivative phases, such as CsPb 2 Br 5 and Cs 4 PbBr 6 . The optimized CsPbBr 3 films exhibit comparable photovoltaic performance to those in the same device architecture fabricated using spin-coating methods. The technique demonstrates good versatility and suitability for potential scalable and high-throughput solution processing of CsPbBr 3 perovskite films. Graphical abstract
危险品化学品经营许可证(带存储)