摘要
Defect engineering and heterogeneous doping are considered as the effective routes to improve the photocatalytic activity of MoS 2 . In this study, tungsten was used to produce sulfur defects and tungsten doping on MoS 2 by one step hydrothermal treatment. Tungsten doping not only promotes the formation of sulfur defects, but also accelerates the efficiency of separation and transfer of electron-hole pairs, which enables the samples to maintain high catalytic oxidation activity for a long time. Furthermore, comparative experiments show that sulfur defects can promote the activation of O 2 and the formation of more active O 2 - and ·OH species. As a result, the W-doped MoS 2 exhibited a high removal efficiency of more than 99% of gaseous mercury. In addition, W-doped MoS 2 showed good stability, long term durability, enhanced water and sulfur resistance under light illumination. This work provides a novel direction for designing efficient photocatalysts based on transition metal dichalcogenides.
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