High-Efficiency Air-Processed Si-Based Perovskite Light-Emitting Devices via PMMA-TBAPF6 Co-Doping

The preparation of high-efficiency perovskite light-emitting devices (PeLEDs) in the air-ambient has always been a challenge. Herein, the authors propose a Si-based near-infrared air-processed PeLED through the anti-solvent engineering. Two materials, poly(methyl methacrylate) (PMMA) and tetrabutylammonium hexafluorophosphate (TBAPF 6 ) are co-doped into the anti-solvent, the former protects the perovskite from degradation in a high-humidity atmosphere, and the latter passivates the defects on perovskite surface and increases the conductivity. Through the anti-solvent engineering, the efficiency of PeLEDs has been significantly enhanced and obtains a maximum external quantum efficiency (EQE) of 10.4%, which is the highest among similar devices. This work shows that it is possible to prepare high-efficiency near-infrared PeLEDs in air-ambient through a simple method.