High-Performance and Low-Power Polycrystalline MoTe2 Thin Film Transistors with Solution-Processed Ternary Oxide High-k Dielectric

Besides the widely investigated potential as alternative to silicon in microelectronics, semiconducting 2D transition metal dichalcogenides (TMDs) also show appealing prospects in thin film transistors (TFTs)-based applications, while still suffer from insufficient demonstration. Herein, the authors systematically report high-performance and low-power chemical vapor deposition-grown polycrystalline molybdenum ditelluride (MoTe 2 ) TFTs with solution-processed ternary Hf 0.5 Zr 0.5 O 2 /HfAlO 2 high-k dielectric. Benefitting from the optimized high quality HfAlO 2 film synthesis and proper postannealing treatment, the constructed MoTe 2 TFTs exhibit a high mobility ≈27.24 cm 2 V −1 S −1 , a current on/off ratio ≈6.43 × 10 5 , threshold voltage ≈−3.27 V, and subthreshold swing (SS) value ≈152.4 mV dec −1 , respectively. Moreover, by supplementing another solution-processed layer of ferroelectric Hf 0.5 Zr 0.5 O 2 to form double layer of HfAlO 2 /Hf 0.5 Zr 0.5 O 2 dielectric, the device performance can be further improved with an ignorable hysteresis, increased mobility of ≈55.53 cm 2 V −1 S −1 , and significantly reduced SS value of ≈110.16 mV dec −1 , respectively. The current investigation offers a feasible strategy to fabricate high-performance and low-power MoTe 2 TFTs for potential TMDs-based TFTs applications.