Suppressing the loss and enhancing the breakdown strengths of high-k materials via constructing layered structure

High dielectric materials are widely used in electronic devices, but their applications are severely hindered by the high loss and low breakdown strength. Herein, a layered structure is designed to effectively suppress the loss and enhance the breakdown strength of high dielectric materials. In the design, the high dielectric films are stacked with linear dielectric films, which can not only form breakdown barriers between adjacent layers but also reduce the leakage conduction loss. As a result, an obvious suppression of loss from 0.13 to 0.05 at 100 Hz, along with a significant increase of breakdown strength from 138 kV/mm to 413 kV/mm, are successfully achieved.