摘要
The interfacial modification has been considered as an effective strategy to build high-efficient and stable perovskite solar cells (PSCs) by reducing the loss of charge recombination and energy at electron transport layers (ETLs)/perovskite interface. Here, a multifunctional inorganic salt of ammonium silicofluoride (ASF) is utilized as an interfacial modifier to incorporate at TiO 2 ETLs/CsPbBr 3 perovskite interface, which decreases the surface oxygen vacancy defects of TiO 2 by its bonding with silicofluoride anion and adjusts the energy level of TiO 2 by dipole effect to minimize interfacial band difference, resulting in a promotion of electrons extraction and a reduction of energy loss. Simultaneously, the ASF modification affords a more hydrophobic TiO 2 substrate for the constitution of perovskite film with larger crystal and passivates anion defects of CsPbBr 3 film via the formation of hydrogen bonds between the H atom in ammonium cations and Br atom in perovskite, which dramatically inhibits the recombination of carriers. Finally, the all-inorganic CsPbBr 3 PSCs based on the ASF-modified TiO 2 ETL achieves a remarkable higher power conversion efficiency of 10.08%, compared to 6.84% efficiency of the control device. In addition, the long-term tolerance of the device without encapsulation towards high humidity and high temperature is significantly enhanced after interface modifying with ASF.
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