2D Indium Phosphorus Sulfide (In2P3S9): An Emerging van der Waals High-k Dielectrics

2D van der Waals (vdW) semiconductors hold great potentials for more-than-Moore field-effect transistors (FETs), and the efficient utilization of their theoretical performance requires compatible high- k dielectrics to guarantee the high gate coupling efficiency. The deposition of traditional high- k dielectric oxide films on 2D materials usually generates interface concerns, thereby causing the carrier scattering and degeneration of device performance. Here, utilizing a space-confined epitaxy growth approach, the authors successfully obtained air-stable ultrathin indium phosphorus sulfide (In 2 P 3 S 9 ) nanosheets, the thickness of which can be scaled down to monolayer limit ( ≈ 0.69 nm) due to its layered structure. 2D In 2 P 3 S 9 exhibits excellent insulating properties, with a high dielectric constant ( ≈ 24) and large breakdown voltage ( ≈ 8.1 MV cm −1 ) at room temperature. Serving as gate insulator, ultrathin In 2 P 3 S 9 nanosheet can be integrated into MoS 2 FETs with high-quality dielectric/semiconductor interface, thus providing a competitive electrical performance of device with subthreshold swings (SS) down to 88 mV dec −1 and a high ON/OFF ratio of 10 5 . This study proves an important strategy to prepare 2D vdW high- k dielectrics, and greatly facilitates the ongoing research of 2D materials for functional electronics.