Research on ohmic contact characteristics of single boron nitride nanoribbon

In this paper, a low-dimensional boron nitride nanoribbon with ultra-large aspect ratio was successfully prepared. Attractively, the singe BNNR, which carries the different metal electrode materials, exhibits excellent ohmic contact properties. The contact characteristics between single BNNR and Aurum electrode are better than Platinum electrode and Aluminum electrode. In addition, C-doping will change the semiconductor behavior of BNNR into metal behavior and the electrons have more chances to penetrate the barrier directly and reduce the ohmic contact resistance of the device which is of great significance in the design, assembly, and fabrication of high-performance semiconductor devices and the research of high-power radioresistance devices. Graphical abstract