Optimization of thermoelectric properties of Al-doped Zn1−xAlxO under high pressure and high temperature

ZnO has excellent electrical properties such as high conductivity ( σ ) and Seebeck coefficient (S) that are important for its thermoelectric properties and have provided the basis for obtaining improved ZnO-based thermoelectric materials by doping. In particular, the most representative Al-doped ZnO (AZO) has excellent thermoelectric performance. Although the Al doping is beneficial for reducing the lattice thermal conductivity of ZnO, the solubility of Al 2 O 3 in ZnO is limited and excessive doping of Al gives rise to the generation of a large amount of the ZnAl 2 O 4 secondary phase that limits the further improvement of the electrical properties. Thus, it is crucial to develop approaches to reduce thermal conductivity while still maintaining high electrical properties. In this work, high pressure and high temperature (HPHT) synthesis was used to adjust the ZnO optical band gap by modifying the lattice parameters of ZnO, and thereby improving the electrical properties of the sample. It was found that the optimal doping content for the samples synthesized at high pressure is different from that of the samples synthesized at normal pressure, providing a new approach for the further improvement of the thermoelectric properties of ZnO. Additionally, high pressure can promote grain refinement that is conducive to the generation of the multi-scale hierarchical structure of the sample that introduces a variety of phonon scattering mechanisms to reduce the thermal conductivity while maintaining a high power factor. The Zn 0.96 Al 0.04 O material obtained by sintering at a pressure of 3 GPa and a temperature of 1053 K for 30 min reached the highest power factor (7.8 µW cm −1 K −2 ) and the highest zT (0.16) at 973 K.