摘要
As an important part of electronic packaging materials, low-dielectric materials can ensure effective signal transmission between electronic components and have an impact on the performance of microprocessor chips. Herein, a porous poly(ether sulfone) membrane with low dielectric constant is fabricated via a breath figure method to meet requirements for high performance of new packaging materials. Perfluorononyl oxide side groups are introduced into the molecular structure of a block poly(ether sulfone) polymer by post-grafting, and the pore-making process and the dielectric properties of the materials are studied. The resulting multi-block copolymers are found to have different electric and thermal properties depending on the molar ratio of perfluorononyl oxide side groups. Regular honeycomb pores can be formed with a polymer segment length of 8/16. Besides, the porous membranes with ordered pore structure on the surface possess low dielectric constant values ranging from 1.57 to 2.19 at 10 kHz. © 2021 Society of Industrial Chemistry.
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