Composition-dependent micro-structure and photocatalytic performance of g-C3N4 quantum dots@SnS2 heterojunction

Semiconductor combination is one of the most common strategies to obtain high-efficiency photocatalysts; however, the effect mechanism of composition ratio on micro-structure and photocatalytic activity is remaining unclear. In this study, a case of g-C 3 N 4 quantum dots@SnS 2 (CNQD n @SnS 2 ) heterojunction with different ratio of CNQD is used to uncover the origin of optimum and excess composition for photocatalysts. Research on the functional mechanism of the optimum composition shows that 0.8 wt.% CNQD are completely attached to the non-(001) facets of SnS 2 , which benefits the formation of type-II heterojunction, resulting in an optimal pollutant degradation and mineralization efficiency. For the excess composition, both experiments and theoretical calculations confirm that excess CNQD (the part exceeding of 0.8 wt.%) located on the (001) facet of SnS 2 , leading to the type-I band alignment of this heterojunction, which severely restricts the separation of photo-induced charge carriers, and thus reduces their lifetime. This work makes the functional mechanism of composition ratio on micro-structure and photocatalytic activity clearer. Related research results provide a new insight into semiconductor combination study and take an important step toward the rational design of highly active photocatalysts.