High-performance UV–visible Photodetectors Based on CH3NH3PbI3-xClx/GaN Microwire Array Heterostructures

ABSTRACT In recent years, the combination of perovskites with other materials to improve the photoelectric performance has received widespread attention. In this work, we demonstrate a hybrid heterostructure photodetector with the combination of GaN microwire array and perovskite. Compared to perovskite and GaN microwire array photodetectors, the hybrid CH 3 NH 3 PbI 3- x Cl x /GaN microwire array photodetector exhibits more excellent photoelectric performances in a wide detection range from ultraviolet to visible. Under 325 nm laser irradiation, the hybrid photodetector generates a large photocurrent (1.04 ×10 -5 A), a high on/off ratio (>10 4 ), a fast response time (raise time of 0.66 ms and decay time of 0.71 ms), and higher responsivity , detectivity. Meanwhile, when the perovskite is combined with the GaN microwire array, the device also has a higher photocurrent, on/off ratio, and faster photoresponse compared with the perovskite photodetector in the visible light region. This is interpreted as the effective separation photogenerated carriers at the hetero-interface, and the directional transfer of carriers within the one-dimensional GaN microwire array. This study sheds light on fabricating high-performance heterostructures photodetectors.