Greatly improved photocatalytic performance of BiVO4/MoS2 heterojunction with enhanced hole transfer and attack capability by ultrasonic agitation and in-situ hydrothermal method

In this work, BiVO 4 /MoS 2 (BM) heterojunction was prepared by combining ultrasonic agitation exfoliation and in-situ growth method. Since flower-like MoS 2 comprised a larger contact area with pollutants, by decorating dewdrops-shaped BiVO 4 on the flower-like MoS 2 , h + on BiVO 4 can be transferred to MoS 2 . Therefore, h + with strong oxidizing ability enriched on MoS 2 can effectively attack the pollutants and substantially improve the photocatalytic activity of the as-prepared heterojunction. The degradation rate of tetracycline with BiVO 4 /MoS 2 heterojunction (68.83 % in 120 min) was 5.64 and 4.23 times that with pure MoS 2 (12.19 %) and pure BiVO 4 (16.26 %), respectively. This work provided a new idea for the construction of highly active MoS 2 -based heterojunctions.