Synthesis and opto-electrical properties of Cu2NiSnS4 nanoparticles using a facile solid-phase process at low temperature

Cu 2 NiSnS 4 nanoparticles were prepared for the first time using a facile solid-phase process at a temperature of 180°C. The crystalline structure, morphology and optical properties of the Cu 2 NiSnS 4 nanoparticles were characterized by means of X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscope (TEM) and ultraviolet-visible (UV-vis) spectrophotometer. The band gap and conversion efficiency of Cu 2 NiSnS 4 nanoparticles were studied at various temperature. The results showed that the Cu 2 NiSnS 4 nanoparticles exhibited an optimum band gap of 1.58 eV and a conversion efficiency of 0.64% at 180 °C, indicating that it maybe be useful in low-cost thin film solar cells.