摘要
Cd-doped In 2 O 3 was synthesized by a facile solvothermal, template-free preparation method. The phase structure and properties were characterized by various methods. The surface of Cd-doped In 2 O 3 became coarse compared with that of pure In 2 O 3 , according to the scanning electron microscopeimages, which enhanced the ability to absorb the gas. The electron paramagnetic resonance showed that the Cd-doped In 2 O 3 can generate more defects and oxygen vacancies . By measuring the gas sensitivity, the response of Cd-doped In 2 O 3 was 1.6 times than that of pure In 2 O 3 . Thus, Cd-doped In 2 O 3 can promote gas-sensing performance compared with pure In 2 O 3 .
危险品化学品经营许可证(带存储)