Fabrication of Flexible Resistive Switching Devices Based on Lead-Free All-Inorganic CsSnBr3 Perovskite Using a One-Step Chemical Vapor Deposition Method

Resistive switching (RS) devices have evolved as one of the most promising candidates in the memory filed due to their excellent endurance and retention, fast switching speed, and extra-high storage density capability. However, the coexistence of toxic lead cations and low RS performance have largely limited the application of halide perovskite in nonvolatile memory filed. Herein, the lead-free all-inorganic perovskite CsSnBr 3 films are synthesized on flexible polyimide (PI) substrates through a one-step chemical vapor deposition (CVD) method to construct environmentally friendly RS devices. The RS devices with Pt/CsSnBr 3 /Pt/PI structure exhibit reliable and reproducible bipolar RS characteristics with an ultralow set/reset voltage (≈0.2/−0.15 V) and a high on/off ratio (≈10 5 ). Additionally, the RS devices are further tested by robust current–voltage curves under consecutive flexing cycles, exhibiting high mechanical bendability and electrical reliability. This work demonstrates that lead-free all-inorganic perovskite CsSnBr 3 film is a good candidate as switching media for applications in the next-generation environmentally friendly RS devices and opens an avenue for future flexible electronics.