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Sulfur promoted n-π* electron transitions in thiophene-doped g-C3N4 for enhanced photocatalytic activity

Journal 2020 · IF 6.146 · 发表于 2020 年 7 月 27 日
作者: Feiyue Ge,Shuquan Huang,Jia Yan,Liquan Jing,Feng Chen,Meng Xie,Yuanguo Xu,Hui Xu,Huaming Li
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摘要

Expanding the optical absorption range of photocatalysts is still a key endeavor in graphitic carbon nitride (g-C 3 N 4 ) studies. Here, we report on a novel thiophene group extending the optical property, which is assigned to n-π* electronic transitions involving the two lone pairs on sulfur (TLPS). The as-prepared samples, denoted as CN-ThA x (where x indicates the amount of ThA added, mg), showed an additional absorption above 500 nm as compared to pristine g-C 3 N 4 . Further, the thiophene group enhanced charge carrier separation to suppress e − /h + pair recombination. The experimental results suggest that the thiophene group can obstruct the polymerization of melem to generate a large plane, thus exposing the lone electron pairs on the sulfur. The photocatalytic activity was evaluated in the decomposition of bisphenol A and H 2 evolution. Compared with g-C 3 N 4 , the optimized CN-ThA 30 sample led to a 6.6- and 2-fold enhancement of the degradation and H 2 generation rates, respectively. The CN-ThA 30 sample allowed for synchronous H 2 production and BPA decomposition.

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