Enhanced hole transport by doping of a lewis acid to Poly(9-vinylcarbazole) for high efficient quantum dot light-emitting diodes

Improving the hole carrier mobility of organic hole-transporting materials is critical for the development of advanced quantum dot light-emitting diodes (QLEDs). Here, a simple method is reported for enhancing the hole-charge mobility in poly(9-vinylcarbazole), PVK. Doping of the PVK using the molecular Lewis acid tris(pentafluorophenyl)borane as a dopant is shown to have a powerful effect on the hole-charge mobility, and the performance of the QLEDs. By adjusting the amount of dopant, the p-type Hall mobility can be increased up to 3.3-fold, and thereby, the external quantum efficiency and current efficiency of QLEDs are improved by 132% and 249%, respectively.