Chemical Vapor Deposition of IrTe2 Thin Films

Two-dimensional (2D) IrTe2has a profound charge ordering and superconducting state, which is related to its thickness and doping. Here, we report the chemical vapor deposition (CVD) of IrTe2films using different Ir precursors on different substrates. The Ir(acac)3precursor and hexagonal boron nitride (h-BN) substrate is found to yield a higher quality of polycrystalline IrTe2films. Temperature-dependent Raman spectroscopic characterization has shown the q1/8phase to HT phase at ~250 K in the as-grown IrTe2films on h-BN. Electrical measurement has shown the HT phase to q1/5phase at around 220 K.Keywords:chemical vapor deposition (CVD);two-dimensional material;IrTe2;iridium acetylacetonate;phase transition