摘要
The emission and absorption properties of Mn doped CsPbCl 3 NC make it ideal candidates as luminescent down shifting layer material for solar cells, However, effective Mn doping and further quantum yield improvement remains challenging. We present our modified hot injection route to obtain Mn doped CsPbCl 3 nanocrystals with different morphologies and enhanced quantum yield. The samples presented were synthesized with precursor MnCl 2 and PbCl 2 with the ratio of 1:1, 1:2, 1:2.5 and 1:3. For samples with lower Mn doping level, the as prepared samples are uniform nanocubes with average size of 11 nm. When MnCl 2 amount is increased beyond 2.5, large piece of nanosheets were found by TEM and AFM with ultrathin thickness and strong quantum confinement effect. CsPbCl 3 nanocrystals with optimal Mn doping level show enhanced quantum yield of 69%. Luminescent down shifting layers prepared from Mn doped CsPbCl 3 nanocrystals successfully increased short-circuit current (6.67%) and PCE (1.67%) of Cu(In,Ga)Se 2 solar cell.
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