Improved air stability and low voltage resistive switching behaviors of NiO-buffered CH3NH3PbI3 films prepared by a solution method

Electric field-induced drift of ions or charged defects in organic–inorganic hybrid perovskite materials generally results in distinct current–voltage hysteresis, opening up a new era in the development of low-cost resistive switching memory and neural synapse devices. Here, a new type of resistive switching memory cell based on NiO-buffered CH3NH3PbI3 films is prepared by a solution method. It exhibits stable and low voltage bipolar resistive switching behaviors: switching voltages lower than  ±0.5 V, an ON/OFF ratio higher than 103, and a reversible current–voltage loop of more than 400 cycles in air ambient. Both 'iodine-vacancy conductive filaments' and the 'interfacial p–n junction effect' are responsible for the improved resistive switching properties. This work establishes the potential for application in low operation voltage organic–inorganic hybrid perovskite resistive switching devices.