摘要
ZnO film ultraviolet photodetectors (UV PDs) have always suffered from slow speed and low photosensitivity that restrict their broader applications. To break through those barriers, high-performance ZnO UV PD based on self-polarized BaTiO 3 (BTO) is first introduced through a facile one-step spin-coating method. Compared with pure ZnO film UV PD with low on/off ratio (65) and slow speed (4.1/7.5 s) at 3 V bias under 350 nm UV light, the BTO-ZnO bilayer film device exhibits an ultrahigh on/off ratio (14 300) and ultrafast response speed (0.11/5.80 ms), which is much faster than that of the most reported ZnO film-based UV PDs. The numerical simulation demonstrates that the spatial distribution of electron concentration of ZnO film is regulated by the self-polarization of BTO film, resulting in low dark current and fast response time of the BTO-ZnO PD. This work provides a new approach to fabricate high-performance PDs based on self-polarized ferroelectric materials.
危险品化学品经营许可证(带存储)