Influence of MoS2 quantum dots size on the properties of memristor devices

In this report we successful synthesized MoS 2 QDs with different size using 1-Dodecanethiol as sulfur source by one pot method. The X-ray diffraction pattern confirmed the formation of hexagonal MoS 2 , whereas the transmission electron microscopic analysis established the growth of zero dimension morphology MoS 2 QDs with the reaction temperature. The Fourier transforms infrared spectroscopy and X-ray photoelectron spectroscopy proved that the surfaces of MoS 2 QDs were coated by thiol and 2H phase MoS 2 were formed. Generally, memristor devices have two states (ON state and OFF state) at the same voltage due to voltage dependent resistance change, which properties can be used for storing information. In this paper, a memristor devices with ITO/PEDOT:PSS /MoS 2 & PVA/Al structure was prepared and the influence of MoS 2 QDs size on the electrical properties of as-prepared devices was investigated. The results indicated that the properties of memristor based on MoS 2 QDs can be modulated by the technology parameters of MoS 2 QDs.