摘要
Thermoelectric properties of orthorhombic or rhombohedral GeSe have attracted great attention recently, with the rise of its structural analog SnSe. However, the p -type cubic GeSe with higher symmetry and higher valence band degeneracy, which might exhibit higher thermoelectric performance, has never been synthesized. Here we report on the successful synthesis of p -type crystalline cubic GeSe by alloying with Sb 2 Te 3 and the spontaneously formed Ge-vacancies. An unexpected glass-like temperature independent lattice thermal conductivity is observed in crystalline cubic GeSe, which results from strong phonon scattering by vacancy-induced disorders. Combining the multiple scattering theory and chemical bond analysis, we further reveal the existence of Anderson localization induced by Ge-vacancies. The Anderson localization results in a nearly constant Seebeck coefficient with increasing the carrier concentration. These results provide a general insight towards understanding and improving the thermoelectric properties of thermoelectric materials with vacancies and atomic-scale disorders.
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