摘要
Tin disulfide (SnS2) has gained a lot of interest in the field of converting solar energy into chemical fuels in light-assisted electrochemical water splitting due to its visible-light band gap and high electronic mobility. However, further decreasing the recombination rate of electron-hole pairs and increasing the density of active states at the valence band edge of the photoelectrodes were a critical problem. Here, we were successful in fabricating the super-thin SnS2nanostructure by a hydrothermal and solution etching method. The super-thin SnS2nanostructure as a photo-electrocatalytic material exhibited low overpotential of 0.25 V at the current density of −10 mA·cm−2and the potential remained basically unchanged after 1000 cycles in an H2SO4electrolyte solution, which was better than that of the SnS2nanosheet and SnS/SnS2heterojunction nanosheet. These results show the potential application of super-thin SnS2nanostructure in electrochemical/photo-electrocatalytic field.Keywords:layered semiconductor;solution etching;SnS2nanostructure;light-Assisted electrochemical water splitting
危险品化学品经营许可证(带存储)