摘要
Two-dimensional (2D) metal dichalcogenides have attracted considerable attention for use in photoelectric devices due to their unique layer structure and strong light-matter interaction. In this paper, vertically grown SnS2nanosheets array film was synthesized by a facile chemical bath deposition (CBD). The effects of deposition time and annealing temperature on the quality of SnS2films was investigated in detail. By optimizing the preparation conditions, the SnS2array film exhibited efficient photoelectric detection performance under sunlight. Furthermore, in order to improve the performance of the photodetector based on SnS2nanosheets film, a transparent graphene film was introduced as the hole-transport layer by wet-chemical method directly transferring techniques. Graphene/SnS2nanosheets array film heterojunction photodetectors exhibit enhanced photoresponsivity. The light on/off ratio of the photodetector based on graphene/SnS2was 1.53, about 1.4 times higher than that of the pristine SnS2array films. The improved photoresponse performance suggested that the effective heterojunction between vertical SnS2nanosheets array film and graphene suppresses the recombination of photogenerated carriers. The results indicate that the graphene/SnS2heterojunction photodetectors have great potential in photodetection devices.Keywords:graphene/SnS2heterojunction;charge separation;photodetectors
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