Effective electron extraction from active layer for enhanced photodetection of photoconductive type detector with structure of Au/CH3NH3PbI3/Au

Increasing the carrier concentration as well as carrier life time could be effective ways to increase the photoresponse of a photoconductive type photodetector . In this paper, layer-structure photodetectors have been fabricated by connecting CH 3 NH 3 PbI 3 film with and without electron transport layer (SnO 2 and SnO 2 /PCBM bilayer). We found that the electron extraction at the electron transport layer and MAPbI 3 interface will boost the photocurrent and responsivity, and faster electron extraction will result in a higher photocurrent improvement. At the same time, the closer is the distance of the interface to the photogenerated electron-hole pairs, the larger is the photocurrent enhancement. The largest photocurrent increasement is almost 3 times the initial value, which increases from 1.54 μA to 6.10 μA.