摘要
Monolayer tungsten disulfide (2D WS2) films have attracted tremendous interest due to their unique electronic and optoelectronic properties. However, the controlled growth of monolayer WS2is still challenging. In this paper, we report a novel method to grow WS2through chemical vapor deposition (CVD) with ZnO crystalline whisker as a growth promoter, where partially evaporated WS2reacts with ZnO to form ZnWO4by-product. As a result, a depletion region of W atoms and S-rich region is formed which is favorable for subsequent monolayer growth of WS2, selectively positioned on the silicon oxide substrate after the CVD growth.Keywords:monolayer WS2;ZnO;CVD;controlled growth
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