Solution processed and low-temperature annealed Eu3+-doped YVO4 thin films

Semiconducting and luminescent thin films could be served as the emitting layer in electroluminescent devices. In this work, Eu 3+ -doped yttrium vanadium oxide (YVO 4 ) luminescent thin films were directly deposited by a solution processing method, and they were annealed at a low temperature of 400 °C. Such low annealed temperature is compatible with commonly used transparent conductive electrodes, such as tin-doped indium oxide and fluorine-doped tin oxide. In addition, the luminescent thin films have a band gap of 3.94 eV and an absolute photoluminescence quantum yield of 23%. These results revealed that Eu 3+ -doped YVO 4 luminescent thin films have a high potential in electroluminescent devices.