Controllable preparation of rGO/VO2(B) intercalation thin films with high thermal sensitive properties

This work first reports the controllable preparation of rGO/VO 2 (B) intercalation films via a simple sol-gel method at relative low temperature (420 °C). The excellent conductance and thermal conductivity of rGO could significantly enhance the performance and sensitivity of VO 2 (B) films to be used for uncooled infrared detectors . Aluminum (Al) reduction is introduced to reduce the oxygen-containing functional groups of graphene oxide (GO) and V 2 O 5 of GO/V 2 O 5 intercalation films in a two-zone furnace. According to our results, the reduced-GO (rGO), as a fast channel for electron transport , was inserted into the VO 2 (B) film, and thus the electron transfer between rGO/VO 2 (B) intercalation films occurs much faster than in pure VO 2 (B) films. The film preparation processes were optimized through adjusting the doping concentration of rGO, and rGO/VO 2 (B) intercalation films with applicable temperature coefficient of resistance (TCR) (−2.78%/K) and square-resistance (21.22 kΩ) were achieved. Our work provided a promising and feasible technique to convict the cost and complexity of high vacuum method used to fabricate the VO 2 thermal sensing thin films .