Improving the performance of Sb2Se3 sensitized solar cells with a versatile CdSe layer modification

Sb 2 Se 3 with its excellent optical, electrical properties emerging as a promising next-generation light harvesting material has gained immense research interest. However, in the Sb 2 Se 3 photovoltaic devices , the impediment of charge transport within the layered structure dragged down the device performance. Here, for the first time, we reported the air-stabled Sb 2 Se 3 sensitized solar cells (SSCs) modified with CdSe interlayer at the TiO 2 /Sb 2 Se 3 heterojunction through successive ionic layer adsorption and reaction (SILAR) process. CdSe modification provided the reduced TiO 2 work function, enhanced optical absorption and suppressed charge recombination. The short-circuit current density, fill factor and open-circuit voltage of the Sb 2 Se 3 SSCs were all remarkably improved. When CdSe layer with five SILAR cycles was applied, the device power conversion efficiency (PCE) was as high as 1.96%, which was the highest recorded PCE of Sb 2 Se 3 nanoparticle based solar cells. Our work illustrates that interfacial engineering provided a useful route to adjust the interface configuration in Sb 2 Se 3 based solar cell and optoelectronic applications .