摘要
For improving the counter electrodes (CEs) quality of quantum dot-sensitized solar cells (QDSSCs), reduced graphene oxide (RGO)/Cu 2 S composite material has been prepared by a facile solvothermal method . The photovoltaic and electrochemical properties of the RGO/Cu 2 S CEs are investigated in detail. Compared with bare Cu 2 S CEs, the QDSSCs based on RGO/Cu 2 S composite electrodes display an apparent improvement in cell performances, the photovoltaic conversion efficiency (PCE) has been enhanced 51%. The QDSSCs with RGO/Cu 2 S CEs yield a PCE of 4.76% with short circuit current density (J sc ) of 17.10 mA cm −2 , open circuit voltage (V oc ) of 0.58 V and fill factor (FF) of 0.48. Present work demonstrates RGO/Cu 2 S composite could be a potential material for CEs of QDSSCs because of its excellent electrical conductivity, better catalytic activity, higher stability and smaller charge transfer resistance.
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