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Triggering superior sodium ion adsorption on (2 0 0) facet of mesoporous WO3 nanosheet arrays for enhanced supercapacitance

Journal 2018 · IF 6.735 · 发表于 2018 年 3 月 20 日
作者: Zhuocheng Yin,Yuyu Bu,Jun Ren,Shuai Chen,Daming Zhao,Yihui Zou,Shaohua Shen,Dongjiang Yang
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摘要

Tungsten trioxide (WO 3 ) is believed to be a promising electrode candidate for supercapacitors, due to its reversible surface redox reaction resulted from the almost same W-O bond lengths with different oxidation states. However, the specific capacitance of WO 3 electrode is very low (<250 mF cm −2 ) because of its low conductivity and slow surface redox reaction kinetics. Herein, to address these issues, mesoporous WO 3 nanosheets with exposed (2 0 0) facets were anchored on activated carbon cloth (ACC) via a simple two-step process including heat treatment and alcohol-thermal process. The ACC was coated on WO 3 seeds and proceed a heat treatment at 500 °C and the time of alcohol-thermal process were 7 h, 8 h, and 9 h labeled as WO 3 @ACC- n ( n  = 7, 8, 9). SEM and TEM images confirmed the WO 3 nanosheets were successful anchored on the ACC. The WO 3 @ACC-8 electrode showed the best specific areal capacitance which could reach as high as 659 mF cm −2 at a current density of 5 mA cm −2 and superior stability with almost no decrease in 10,000 cycles in the presence of Na 2 SO 4 as the neutral electrolyte. The capacitance is encouragingly much higher than the previously reported values in a three-electrode system in the neutral aqueous condition. DFT calculations reveal that, in comparison to the (0 0 2) and (0 2 0) facets, the exposed (2 0 0) facets of the mesoporous WO 3 nanosheets triggers the superior Na + adsorption, which accelerates the Na + -involved surface redox reaction for the boosted supercapacitor performance. A flexible asymmetric supercapacitor (FASC) was fabricated from the WO 3 @ACC electrode, which exhibits high energy density (0.5 mWh cm −3 ) and power density (62 mW cm −3 ) without any attenuation during ±180° wide-angle bending.

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