摘要
Molybdenum disulfide (MoS2) layers show excellent optical and electrical properties and have many potential applications. However, the growth of high-quality MoS2layers is a major bottleneck in the development of MoS2-based devices. In this paper, we report a chemical vapor transport deposition method to investigate the growth behavior of monolayer/multi-layer MoS2using water (H2O) as the transport agent. It was shown that the introduction of H2O vapor promoted the growth of MoS2by increasing the nucleation density and continuous monolayer growth. Moreover, the growth mechanism is discussed.Keywords:chemical vapor transport deposition;molybdenum disulfide;monolayer;water;mechanism
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